PART |
Description |
Maker |
SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
2SK3719 |
N-CHANNEL Silicon J-FET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|
2SK3783 |
N-channel Silicon J-FET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|
TPC8403 |
Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching 3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
ECH8668 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
2SK1578 |
N-Channel Junction FET Capacitor Microphone Applications N-Channel Silicon MOSFET
|
Sanyo
|
CMLDM758513 |
SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS
|
Central Semiconductor Corp
|
CMRDM357511 |
SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS
|
Central Semiconductor Corp
|